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SP004GBLFU266X02 - Silicon Power DDR4 4GB 2666MHZ CL19 1.2V DESKTOP

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SKU: SP004GBLFU266X02
Availability: In Stock
Weight: 1.00 LBS
Shipping: Calculated at Checkout
46C566DB-4644-460E-8DA7-038C0B9646AB E06A9D60-42A9-4459-8131-FA3002495928
A Memory Upgrade That Gives More Designed to help your system run faster and smoother, this DDR4 UDIMM series offers up to the industry's fastest memory speed with 3200MT/s. Plus, DDR4 technology is up to twice as fast as its predecessor, DDR3, delivering more bandwidth and more energy efficiency. A simple upgrade allows for faster application load times, increased responsiveness, and the ability to handle data-intensive programs with ease. Extra Memory, Extra Energy Savings Too More memory is an easy cure for a slow computer, but it can also increase energy expenditure and overall stress on the system hardware. In addition to a performance upgrade, this DDR4 UDIMM series provides smarter energy consumption with a lower 1.2V voltage. This reduces power usage compared to the previous DDR3 1.5V module. Plus, greater heat dissipation keeps the computer running at lower temperatures for higher stability and a longer system hardware lifespan. Compatible For Your Convenience Wondering if your new memory module will function smoothly in your new rig or trusted old computer? This DDR4 UDIMM series is compatible with a wide range of desktop PCs. With the adaptibility of this memory module, you’ll avoid the random reboots and blue screens that accompany an unstable and incompatible memory module. A Lifetime Of Quality This DDR4 UDIMM series is 100% factory-tested to guarantee a superior level of stability, durability, and reliability. If that's not reassuring enough, it's also backed by a lifetime warranty that promises complete Silicon Power technical support and services.

 

Specification:

 

Power
Memory voltage1.2 V
Design
BacklightNo
CertificationCE, FCC, Green dot, WEEE, RoHS
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 4 GB
Internal memory4 GB
Component forNotebook
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
ECCNo
Memory clock speed2666 MHz
Internal memory typeDDR4
Features
Buffered memory typeUnregistered (unbuffered)
BacklightNo
Memory layout (modules x size)1 x 4 GB
Internal memory4 GB
Component forNotebook
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
CertificationCE, FCC, Green dot, WEEE, RoHS
ECCNo
Memory clock speed2666 MHz
Internal memory typeDDR4
Harmonized System (HS) code84733020
Certificates
CertificationCE, FCC, Green dot, WEEE, RoHS
Other features
Harmonized System (HS) code84733020

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