U.2 Form Factor and Non-Volatile Memory Express (NVMe)
983 DCT 960GB NVMe SSDs in the U.2 form factor deliver blazing fast sequential read/write speeds up to 3,000/1,050 MB/s and random read/write speeds up to 400/40K IOPS. They also support PCI Express® (PCIe) Gen 3 x 4 lanes to provide high bandwidth and low latency.
Advanced ECC Engine and End-to-End Data Protection
Detect signal discrepancies and proactively remedy them in real time with the Error Correcting Code (ECC) engine. Secure data without performance degradation thanks to AES 256-bit encryption.
Power-Loss Protection
Protect data integrity from unexpected power loss with Samsung's advanced power-loss protection architecture. Using the electricity from a tantalum capacitor to provide enough time to transfer the cached data in the DRAM to the flash memory, you can be assured no loss of data.
V-NAND Technology
Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 64 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.
Sustained Performance
Built to handle the heavier workloads of servers, the 983 DCT delivers an exceptionally high level of sustained performance over the life of the SSD to meet the demands for increased data handling.
High Quality of Service (QoS)
Designed for server applications, the 983 DCT offers a high Quality of Service (QoS) for a consistent, predictable latency and IOPS.
S.M.A.R.T.
Monitor the computer drives proactively to detect and report various reliability indicators with Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T).
Dynamic Thermal Guard Protection
Safeguard the SSD from overheating by automatically controlling the speed of the CPU relative to its core temperature, by throttling back the performance to prevent thermal shutdown.
Specification:
Hard drive | |
---|---|
PCI Express interface data lanes | x4 |
SSD capacity | 1920 GB |
Memory type | TLC |
Data transmission | |
Data transfer rate | 32 Gbit/s |
Endurance | |
Uncorrectable Bit Error Rate (UBER) | < 1 per 10^17 bits read |
Mean time between failures (MTBF) | 2000000 h |
Performance | |
Interface | PCI Express 3.0 |
Component for | Server/workstation |
SSD usage tag | Data center |
NVMe | Yes |
PCI Express interface data lanes | x4 |
SSD capacity | 1920 GB |
Memory type | TLC |
Uncorrectable Bit Error Rate (UBER) | < 1 per 10^17 bits read |
Mean time between failures (MTBF) | 2000000 h |
Data transfer rate | 32 Gbit/s |
Design | |
Component for | Server/workstation |
Product colour | Black |
SSD form factor | 2.5" |
Features | |
Interface | PCI Express 3.0 |
Component for | Server/workstation |
SSD usage tag | Data center |
NVMe | Yes |
PCI Express interface data lanes | x4 |
SSD capacity | 1920 GB |
Memory type | TLC |
Uncorrectable Bit Error Rate (UBER) | < 1 per 10^17 bits read |
Mean time between failures (MTBF) | 2000000 h |
Data transfer rate | 32 Gbit/s |
SSD form factor | 2.5" |
Harmonized System (HS) code | 84717070 |
Operational conditions | |
Operating temperature (T-T) | 0 - 70 °C |
Storage relative humidity (H-H) | 5 - 95% |
Operating shock | 1500 G |
Technical details | |
Interface | PCI Express 3.0 |
Operating temperature (T-T) | 0 - 70 °C |
Storage relative humidity (H-H) | 5 - 95% |
Operating shock | 1500 G |
Product colour | Black |
SSD form factor | 2.5" |
Sequential read/write | Yes |
NAND controller | V-NAND |
SSD endurance rating | 1.3 DWPD for 3 years |
Other features | |
Uncorrectable Bit Error Rate (UBER) | < 1 per 10^17 bits read |
Product colour | Black |
Sequential read/write | Yes |
NAND controller | V-NAND |
SSD endurance rating | 1.3 DWPD for 3 years |