Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 48 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.
Sustained Performance
Built to handle the 24/7 operation and heavier workloads of data center usage, the SM863a delivers an exceptionally high level of sustained performance and consistent low latency over the life of the SSD to meet the demands for increasing data handling.
Latency and QoS
The SM863a offers extremely low latency and a high level of Quality of Service (QoS), which are both essential for data center and cloud server applications.
Advanced ECC Engine and End-to-End Data Protection
Detect signal discrepancies and proactively remedy them in real time with the Error Correcting Code (ECC) engine.
Power-Loss Protection
Protect data integrity from unexpected power loss with Samsung's advanced power-loss protection architecture. Using the electricity from a tantalum capacitor to provide enough time to transfer the cached data in the DRAM to the flash memory, you can be assured no loss of data.
S.M.A.R.T.
Monitor the computer drives proactively to detect and report various reliability indicators with Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T).
Dynamic Thermal Guard Protection
Safeguard the SSD from overheating by automatically controlling the speed of the CPU relative to its core temperature, by throttling back the performance to prevent thermal shutdown.
Specification:
Hard drive | |
---|---|
SSD capacity | 1920 GB |
Memory type | V-NAND TLC |
Data transmission | |
Read speed | 550 MB/s |
Write speed | 520 MB/s |
Random write (4KB) | 30000 IOPS |
Random read (4KB) | 98000 IOPS |
Data transfer rate | 6 Gbit/s |
Security | |
Security algorithms | 256-bit AES |
Endurance | |
Mean time between failures (MTBF) | 2000000 h |
Performance | |
Interface | Serial ATA III |
Component for | PC |
Controller type | Samsung Metis |
NVMe | No |
Sequential write speed (AS SSD) | 520 MB/s |
Sequential read speed (AS SSD) | 550 MB/s |
End-to-End Data Protection | Yes |
SSD capacity | 1920 GB |
Security algorithms | 256-bit AES |
S.M.A.R.T. support | Yes |
Read speed | 550 MB/s |
TRIM support | Yes |
Write speed | 520 MB/s |
Memory type | V-NAND TLC |
Random write (4KB) | 30000 IOPS |
Random read (4KB) | 98000 IOPS |
Mean time between failures (MTBF) | 2000000 h |
Hardware encryption | Yes |
Data transfer rate | 6 Gbit/s |
Design | |
Component for | PC |
SSD form factor | 2.5" |
Features | |
Interface | Serial ATA III |
Component for | PC |
Controller type | Samsung Metis |
NVMe | No |
Sequential write speed (AS SSD) | 520 MB/s |
Sequential read speed (AS SSD) | 550 MB/s |
End-to-End Data Protection | Yes |
SSD capacity | 1920 GB |
Security algorithms | 256-bit AES |
S.M.A.R.T. support | Yes |
Read speed | 550 MB/s |
TRIM support | Yes |
Write speed | 520 MB/s |
Memory type | V-NAND TLC |
Random write (4KB) | 30000 IOPS |
Random read (4KB) | 98000 IOPS |
Mean time between failures (MTBF) | 2000000 h |
Hardware encryption | Yes |
Data transfer rate | 6 Gbit/s |
SSD form factor | 2.5" |
Harmonized System (HS) code | 84717070 |
Power | |
Power consumption (max) | 1.5 W |
Power consumption (write) | 3.2 W |
Power consumption (read) | 2.1 W |
Operating voltage | 5 V |
Operational conditions | |
Operating temperature (T-T) | 0 - 70 °C |
Technical details | |
Interface | Serial ATA III |
S.M.A.R.T. support | Yes |
Operating temperature (T-T) | 0 - 70 °C |
TRIM support | Yes |
Hardware encryption | Yes |
SSD form factor | 2.5" |
Weight & dimensions | |
Width | 3.94" (100 mm) |
Weight | 2.47 oz (70 g) |
Height | 2.75" (69.8 mm) |
Depth | 0.268" (6.8 mm) |