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MZ-76E1T0E - Samsung 1TB 860 EVO 6G SATA 2.5IN

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SKU: MZ-76E1T0E
Availability: In Stock
Weight: 1.00 LBS
Shipping: Calculated at Checkout
46C566DB-4644-460E-8DA7-038C0B9646AB E06A9D60-42A9-4459-8131-FA3002495928
Designed for everyday computing, the Samsung 860 EVO is powered by our latest V-NAND technology and a robust algorithm-based Samsung controller to handle the workloads of mainstream PCs and laptops. Get fast, enduring performance with exceptional reliability and expanded compatibility.

Samsung V-NAND Technology
Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 64 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.

Fast Read/Write Performance
The 860 PRO performs at sequential write speeds up to 520 MB/s and sequential read speeds up to 550 MB/s with a robust a robust algorithm-based Samsung MJX controller (up to 1 GHz).

Relentless Endurance
With an industry warranty offering up to 2,400 Total Bytes Written (TBW) for 5 years, and our V-NAND flash's higher endurance compared to conventional planar type NAND flash, our 860 PRO SSDs can consistently meet the needs of high-end use and heavy workloads with ease, such as safely storing and rendering 4K videos and 3D data.

 

Specification:

 

Hard drive
SSD capacity1920 GB
Memory typeMLC
Data transmission
Random write (4KB)19000 IOPS
Random read (4KB)98000 IOPS
Data transfer rate6 Gbit/s
Security
Security algorithms256-bit AES
Endurance
Mean time between failures (MTBF)1500000 h
Performance
InterfaceSerial ATA III
Component forServer/workstation
Controller typeSamsung MJX
NVMeNo
Sequential write speed (AS SSD)520 MB/s
Sequential read speed (AS SSD)550 MB/s
NAND flash typeMLC (Multi Level Cell)
Active garbage collectionYes
TBW rating698
SSD capacity1920 GB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
TRIM supportYes
Memory typeMLC
Random write (4KB)19000 IOPS
Random read (4KB)98000 IOPS
Mean time between failures (MTBF)1500000 h
Data transfer rate6 Gbit/s
Design
Component forServer/workstation
Product colourBlack
SSD form factor2.5"
Features
InterfaceSerial ATA III
Component forServer/workstation
Controller typeSamsung MJX
NVMeNo
Sequential write speed (AS SSD)520 MB/s
Sequential read speed (AS SSD)550 MB/s
NAND flash typeMLC (Multi Level Cell)
Active garbage collectionYes
TBW rating698
SSD capacity1920 GB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
TRIM supportYes
Memory typeMLC
Random write (4KB)19000 IOPS
Random read (4KB)98000 IOPS
Mean time between failures (MTBF)1500000 h
Data transfer rate6 Gbit/s
SSD form factor2.5"
Harmonized System (HS) code84717070
Power
Power consumption (write)2.95 W
Power consumption (read)2.02 W
Power consumption (idle)1.05 W
Operational conditions
Operating temperature (T-T)0 - 70 °C
Storage temperature (T-T)-40 - 85 °C
Operating relative humidity (H-H)5 - 95%
Storage relative humidity (H-H)5 - 95%
Operating shock1500 G
Non-operating shock1500 G
Non-operating vibration20 G
Technical details
InterfaceSerial ATA III
S.M.A.R.T. supportYes
Operating temperature (T-T)0 - 70 °C
TRIM supportYes
Storage temperature (T-T)-40 - 85 °C
Operating relative humidity (H-H)5 - 95%
Storage relative humidity (H-H)5 - 95%
Operating shock1500 G
Non-operating shock1500 G
Non-operating vibration20 G
Product colourBlack
SSD form factor2.5"
Weight & dimensions
Width3.94" (100.1 mm)
Weight2.12 oz (60 g)
Height0.272" (6.9 mm)
Depth2.75" (69.9 mm)
Other features
Product colourBlack

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