M471B5173BH0-YK0 - Samsung 4GB DDR3-1600 UNBUFFERED

DRAM is extensively used as the main memory in virtually all computing devices, such as desktop and notebook computers. It is a type of RAM (random access memory), and is the most widely used semiconductor memory used in current generation computers, offering multiple advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on notebook computers. With rapid developments in semiconductor memory technology, DRAM has demonstrated significant performance enhancements, resulting in a considerable overall performance improvement for the computing segment.

Because of their small sizes, notebook computers require components with the smallest form factors. Specific memory types have thus been developed to fulfill this need. DRAM for notebook computers is available in the form of a SODIMM (small outline dual in-line memory module), which has the smallest footprint and occupies a minimum of board space, yet delivers the same levels of performance as regular a DIMM used in standard desktop computers. DDR, DDR2, and DDR3 memory are available as SODIMM DRAM, and provide different physical designs and pin layouts for ease in visual identification. SODIMM DRAM is available in both buffered and unbuffered versions, and thus can be deployed in notebooks for home/office use as well as server-class machines. SODIMM DRAM also consumes much lower power. The latest generation DDR3 SODIMM operates at significantly low voltages, and is thus used on almost all mobile and battery-powered devices, such as notebook computers and portable media players.

 

Specification:

 

Power
Memory voltage	1.35 V
Memory
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Notebook
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.35 V
Module configuration	512M x 8
Memory ranking	1
ECC	No
Memory clock speed	1600 MHz
Internal memory type	DDR3
Features
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Notebook
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.35 V
Module configuration	512M x 8
Memory ranking	1
ECC	No
Memory clock speed	1600 MHz
Internal memory type	DDR3
Operational conditions
Operating temperature (T-T)	0 - 85 °C