M393B5273CH0-CH9 - Samsung 4GB 2RX8 PC3-10600R CL9 ECC

First in the Market with Advanced DDR3. Double Data Rate Three, Synchronous DRAM, or DDR3, is the new generation of high performance, ultra-low-power memory interface technology used in high performance servers, desktops and notebooks. As the number one supplier in memory, Samsung continues to lead the industry with cutting-edge SDRAM products from the first DDR in 1997, DDR2 in 2001 and DDR3 in 2005. Samsung's high performance main memory solutions are based on JEDEC standards and leverage the company's leadership in advanced research and development of semiconductor process technology. Samsung's DDR3 brings new levels of performance to notebooks, desktops and servers and pushes the envelope in key areas like power consumption, speed and bandwidth. Our recent 30nm class, 1.35V, 2Gb DDR3 is the world's first ultra-low-power memory technology, with more than a 76% power savings over traditional DDR2 at 2x the bandwidth. When you're ready to make a move to DDR3 or are considering upgrading your systems, we're here to provide the best optimal solution for enhancing your competitive edge.

 

Specification:

 

Power
Memory voltage	1.35 V
Memory
Buffered memory type	Registered (buffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	PC/server
Memory form factor	240-pin DIMM
CAS latency	9
Memory voltage	1.35 V
Module configuration	512M x 72
Memory ranking	2
Memory clock speed	1333 MHz
Internal memory type	DDR3L
Features
Buffered memory type	Registered (buffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	PC/server
Memory form factor	240-pin DIMM
CAS latency	9
Memory voltage	1.35 V
Module configuration	512M x 72
Memory ranking	2
Memory clock speed	1333 MHz
Internal memory type	DDR3L
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Weight & dimensions
Height	1.18" (30 mm)