M393B5270DH0-CK0 - Samsung 4GB 1RX4 PC3-12800R ECC-R

DRAM is a type of RAM (random access memory) used as the main memory in several computing devices, such as desktop and notebook computers, servers, and high-end workstations. It is the most widely used semiconductor memory used in current generation computers, and offers several significant advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on various computing platforms, such as home/personal computers, portable computers, and network servers. This type of memory has undergone several innovative technological developments and offers very high price/performance ratios.

 

Specification:

 

Power
Memory voltage	1.35 V
Memory
Buffered memory type	Registered (buffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	PC/server
Memory form factor	240-pin DIMM
CAS latency	9
Memory voltage	1.35 V
Module configuration	512M x 72
Row cycle time	9 ns
Refresh row cycle time	9 ns
ECC	Yes
Memory clock speed	1333 MHz
Internal memory type	DDR3
Features
Buffered memory type	Registered (buffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	PC/server
Memory form factor	240-pin DIMM
CAS latency	9
Memory voltage	1.35 V
Module configuration	512M x 72
Row cycle time	9 ns
Refresh row cycle time	9 ns
ECC	Yes
Memory clock speed	1333 MHz
Internal memory type	DDR3
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Technical details
Sustainability certificates	RoHS