Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
Specification:
Power | |
---|---|
Memory voltage | 1.35 V |
Memory | |
Buffered memory type | Registered (buffered) |
Memory layout (modules x size) | 1 x 16 GB |
Internal memory | 16 GB |
Component for | PC/server |
Memory form factor | 240-pin DIMM |
CAS latency | 9 |
Memory voltage | 1.35 V |
Module configuration | 2048M x 72 |
Row cycle time | 9 ns |
Refresh row cycle time | 9 ns |
ECC | Yes |
Memory clock speed | 1333 MHz |
Internal memory type | DDR3 |
Features | |
Buffered memory type | Registered (buffered) |
Memory layout (modules x size) | 1 x 16 GB |
Internal memory | 16 GB |
Component for | PC/server |
Memory form factor | 240-pin DIMM |
CAS latency | 9 |
Memory voltage | 1.35 V |
Module configuration | 2048M x 72 |
Row cycle time | 9 ns |
Refresh row cycle time | 9 ns |
ECC | Yes |
Memory clock speed | 1333 MHz |
Internal memory type | DDR3 |
Operational conditions | |
Operating temperature (T-T) | 0 - 85 °C |
Technical details | |
Sustainability certificates | RoHS |
Weight & dimensions | |
Width | 5.25" (133.3 mm) |
Depth | 0.157" (4 mm) |
Height | 1.18" (30 mm) |