Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
Specification:
Power | |
---|---|
Memory voltage | 1.35 V |
Memory | |
Buffered memory type | Registered (buffered) |
Memory layout (modules x size) | 1 x 8 GB |
Internal memory | 8 GB |
Component for | PC/server |
Memory form factor | 240-pin DIMM |
CAS latency | 9 |
Memory voltage | 1.35 V |
Memory ranking | 2 |
ECC | Yes |
Memory clock speed | 1333 MHz |
Internal memory type | DDR3 |
Features | |
Buffered memory type | Registered (buffered) |
Memory layout (modules x size) | 1 x 8 GB |
Internal memory | 8 GB |
Component for | PC/server |
Memory form factor | 240-pin DIMM |
CAS latency | 9 |
Memory voltage | 1.35 V |
Memory ranking | 2 |
ECC | Yes |
Memory clock speed | 1333 MHz |
Internal memory type | DDR3 |