In addition to Registered DIMM’s features, Samsung DDR4 memory is available as Registered DIMM that it provides an optimized solution for highly virtualized environments, high-performance computing and networking. Semiconductor modules of Samsung DDR4 are designed with new system circuit architecture to deliver higher performance with low power requirements than previously available memory products. Doubled bandwidth, along with reduced voltage and dramatically lower power consumption, improves performance and optimizes the total cost of ownership.
Specification:
Power | |
---|---|
Memory voltage | 1.2 V |
Memory | |
Buffered memory type | Registered (buffered) |
Memory layout (modules x size) | 1 x 8 GB |
Internal memory | 8 GB |
Component for | PC/server |
Memory form factor | 288-pin DIMM |
CAS latency | 17 |
Memory voltage | 1.2 V |
Module configuration | 1024M x 72 |
Memory ranking | 2 |
ECC | Yes |
Memory clock speed | 2400 MHz |
Internal memory type | DDR4 |
Features | |
Buffered memory type | Registered (buffered) |
Memory layout (modules x size) | 1 x 8 GB |
Internal memory | 8 GB |
Component for | PC/server |
Memory form factor | 288-pin DIMM |
CAS latency | 17 |
Memory voltage | 1.2 V |
Module configuration | 1024M x 72 |
Memory ranking | 2 |
ECC | Yes |
Memory clock speed | 2400 MHz |
Internal memory type | DDR4 |
Operational conditions | |
Operating temperature (T-T) | 0 - 85 °C |
Weight & dimensions | |
Height | 1.23" (31.2 mm) |