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M391A4G43MB1-CTD - Samsung 32GB DDR4-2666 UNBUFFERED ECC

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$533.72
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SKU: M391A4G43MB1-CTD
Availability: In Stock
Weight: 1.00 LBS
Shipping: Calculated at Checkout
46C566DB-4644-460E-8DA7-038C0B9646AB E06A9D60-42A9-4459-8131-FA3002495928
Proven DRAM module solution in the global market Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.

 

Specification:

 

Power
Memory voltage1.5 V
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/server
Memory form factor240-pin DIMM
CAS latency9
Memory voltage1.5 V
Module configuration1024M x 72
Row cycle time9 ns
Refresh row cycle time9 ns
ECCYes
Memory clock speed1333 MHz
Internal memory typeDDR3
Features
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/server
Memory form factor240-pin DIMM
CAS latency9
Memory voltage1.5 V
Module configuration1024M x 72
Row cycle time9 ns
Refresh row cycle time9 ns
ECCYes
Memory clock speed1333 MHz
Internal memory typeDDR3
Operational conditions
Operating temperature (T-T)0 - 85 °C
Technical details
Sustainability certificatesRoHS
Doesn't containHalogen
Weight & dimensions
Width5.25" (133.3 mm)
Depth0.157" (4 mm)
Height1.18" (30 mm)

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