M386B4G70BM0-YH9 - Samsung 32GB DDR3-1333 LOAD-REDUCED

Feel the difference in performance from Samsung’s advanced memory technology
Samsung’s DRAM drives innovation and accelerates performance in various computing solutions, from PCs to servers for advanced AI applications.

 

Specification:

 

Power
Memory voltage	1.35 V
Memory
Buffered memory type	Registered (buffered)
Memory layout (modules x size)	1 x 32 GB
Internal memory	32 GB
Component for	PC/server
Memory form factor	240-pin DIMM
CAS latency	11
Memory voltage	1.35 V
Module configuration	4096M x 72
Row cycle time	11 ns
Refresh row cycle time	11 ns
Memory ranking	4
ECC	Yes
Memory clock speed	1600 MHz
Internal memory type	DDR3
Features
Buffered memory type	Registered (buffered)
Memory layout (modules x size)	1 x 32 GB
Internal memory	32 GB
Component for	PC/server
Memory form factor	240-pin DIMM
CAS latency	11
Memory voltage	1.35 V
Module configuration	4096M x 72
Row cycle time	11 ns
Refresh row cycle time	11 ns
Memory ranking	4
ECC	Yes
Memory clock speed	1600 MHz
Internal memory type	DDR3
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Technical details
Doesn't contain	Halogen
Weight & dimensions
Width	5.25" (133.3 mm)
Depth	0.189" (4.8 mm)
Height	1.19" (30.4 mm)